The silicon drift chamber is used for detecting ionizing radiation and particles. Typical applications include particle tracking and low noise read-out of scintillator crystals. Drift chambers have a pattern of cathodes (p+ implants) on both sides of the silicon chip. A set of anodes (n+ implants) at the edge is used for reading out signals. With silicon drift chambers, detector systems with very low noise levels can be made. The technology offers two-dimensional position resolution with fewer read-out channels than microstrip detectors. However, the price is longer read-out time.

SINTEF MiNaLab has long experience with silicon drift chambers. We offer electrical simulation services, device design, process development, feasibility studies, and custom-tailored process runs of small and medium-scale production series.

Silicon drift chambers offer low read-out capacitance at the price of a longer read-out time compared to other detectors. They can also be designed for two dimensional position resolution with the advantage of using far less electronics channels than strip detectors.

Schematic drawing of the working principle of a silicon drift chamber. The ionising particle generates holes and electrons that drift to the nearest cathode and anode, respectively. By reading out each anode separately, two-dimensional position resolution is obtained. One dimension is given directly by the anode position. The other dimension is calculated from the drift time given by the time difference between the cathode and anode signals.